Project Overview
This project aims to provide undergraduate students with hands-on research experience in RF/microwave integrated circuit design by focusing on passive structures such as inductors, capacitors, and baluns in the TSMC 65 nm process. Students will define these devices in a fully parametric way, where layout variables such as line width, spacing, number of turns, and metal layer choices can be easily adjusted. Using HFSS as the main simulation environment, they will build parameterized models, perform electromagnetic simulations, and extract S-parameters and key performance metrics including quality factor, resonant frequency, insertion loss, and return loss. By systematically sweeping parameters and analyzing the results, students will generate a dataset that maps input geometries to performance outcomes, allowing them to explore trade-offs and identify optimal design regions. At the end of the project, the students will deliver parameterized passive components with well-documented input–output relationships, ensuring reproducibility and establishing a solid foundation for future RFIC design research.
Objectives
The objectives of this project are:
- To develop parameterized models of inductors, capacitors, and baluns in TSMC 65 nm technology.
- To use HFSS to simulate and evaluate the electromagnetic performance of these structures.
- To establish clear input–output relationships by mapping design parameters to device characteristics.
- To build a reproducible design flow that enables systematic exploration of trade-offs in passive RF structures.
To provide undergraduate students with practical skills in parametric design, EM simulation, and performance analysis of on-chip RF components.
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